transistor base emitter collector voltage

Let’s consider an NPN transistor which is unbiased. Thus, it is necessary for the collector terminal to be large enough so that it can dissipate the heat and the device may not burn out. Collector: The collector terminal is moderately doped, and the size of the collector region is slightly more than emitter region because all the charge carriers coming from the emitter recombine at base and heat is released in this process.The doping intensity of base is also less than emitter and collector for the same reason mentioned above. The size of the base is always kept small so that charge carriers coming from the emitter and entering base will not recombine in the base region and will be directed towards the collector region. Base: The size of the base region is extremely small, it is less than emitter as well as the collector.The size of the emitter is more than base but less than the collector. This is because the work of the emitter is to supply charge carrier to the collector via the base. Emitter: Emitter terminal is the heavily doped region as compared two base and collector.I intend to explain the working of the transistor with the help of these paramount parameters.īefore I delve into the working details of the transistor, let’s understand these three significant terminals of the transistor and their characteristics. One is the Emitter-base junction, and the other is Collector- base junction. Thus, there are two junctions of the transistors. Thus, as there are three terminals of the transistor, i.e. The transistor as its names suggests transfer resistance from one channel to other channels. We will discuss functions of these three terminals in the working of the transistor.Ī transistor is a semiconductor device, so the semiconductor material used in its construction can be either germanium or silicon, but silicon is preferred over germanium because it possesses smaller cutoff current. The three terminals have specific names that are as follows:. The transistor formed in the former case will be NPN transistor and that formed in the latter case is PNP transistor. We can use either sandwiched P-type layer of the semiconductor between two N-type semiconductors or by sandwiching N-type layer between two P-type semiconductor specimen. A diode is two terminal device, thus, if we merge the two diodes provided that one terminal is common, the resulting device will comprise of three terminals. Let’s discuss constructional features of the transistor, how this 3 terminal device is formed. Now, all the computing devices are available in small size which we can easily carry with us anywhere. In the year 1947, John Bardeen along with William Shockley & Brattain invented the transistor. But this all has become possible with the invention of the transistor. Obviously, to work with it is a cumbersome process.įortunately, we have compact size processing system in the contemporary world. Now you can imagine what will happen if the entire room consists of a single processing system. This is because devices such as computers were entirely based on them.īut the problem started with their size which can capture the entire room. In the beginning of 20 th century when the vacuum triode was invented, it was considered as the significant development in the field of electronics. Let me explain this with the subvention of history.

Transistor base emitter collector voltage